Methods are provided for depositing materials in forming semiconductor devices on a substrate, such as metal oxide transistors. In one embodiment, the invention generally provides a method of processing a substrate including forming a gate dielectric on a substrate having a first conductivity, forming a gate electrode on the gate dielectric, forming a first pair of sidewall spacers along laterally opposite sidewalls of the gate electrode, etching a pair of source/drain region definitions on opposite sides of the electrode, depositing a silicon-germanium material selectively in the source/drain region definitions, and implanting a dopant in the deposited silicon-germanium material to form a source/drain region having a second conductivity.