The present invention provides a JFET which receives an additional implant
during fabrication, which extends its drain region towards its source
region, and/or its source region towards its drain region. The implant
reduces the magnitude of the e-field that would otherwise arise at the
drain/channel (and/or source/channel) junction for a given drain and/or
source voltage, thereby reducing the severity of the gate current and
breakdown problems associated with the e-field. The JFET's gate layer is
preferably sized to have a width which provides respective gaps between
the gate layer's lateral boundaries and the drain and/or source regions
for each implant, with each implant implanted in a respective gap.