A nitride semiconductor laser device comprises, on a principle face of a
nitride semiconductor substrate: a nitride semiconductor layer having a
first conductivity type; an active layer comprising indium, and a nitride
semiconductor layer having a second conductivity type that is different
from said first conductivity type, and on the surface of which is formed
a stripe ridge; said principal face of said nitride semiconductor
substrate having an off angle a (.theta..sub.a) with respect to a
reference crystal plane, in at least a direction substantially parallel
to said stripe ridge.