An AMLCD having high fineness and high contrast is realized. First, an
interlayer film is provided on an element electrode, and an opening
portion is formed in the interlayer film. Next, after a first metal layer
is formed, an embedded insulating layer is formed. The embedded
insulating layer is retreated by a means, such as an etch back method, to
realize a state in which only the opening portion is filled with the
embedded insulating layer. By this, electric connection between the
element electrode and a second metal layer becomes possible while keeping
the flatness.