A mask manufacturing method suitable for an exposure method wherein a mask
on which a desired pattern and a supplementary pattern with formations
smaller than those of the desired pattern are arrayed is illuminated, and
the light which passed through the mask onto a member to be exposed is
projected via a projection optical system, said method comprising a
selecting step for selecting one of the following three supplementary
patterns, a first supplementary pattern wherein said supplementary
pattern is disposed at a position where a line extending in the vertical
direction as to the pitch direction from a certain desired pattern hole
of said desired pattern, and a line connecting the supplementary pattern
hole closest to said certain desired pattern hole in the vertical
direction with said certain desired pattern hole, intersect at an angle
of 0.degree., a second supplementary pattern wherein said angle is
0.degree. or more but less than 45.degree., and a third supplementary
pattern wherein said supplementary pattern supplementary pattern is
disposed at a position where said is disposed at a position where said
angle is 45.degree..