A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including Al.sub.aGa.sub.bIn.sub.1-a-bP (where 0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, and 0.ltoreq.a+b.ltoreq.1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.

 
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