A method of forming a feature in a low-k dielectric layer is provided. A
low-k dielectric layer is placed over a substrate. A patterned
photoresist mask is placed over the low-k dielectric layer. At least one
feature is etched into the low-k dielectric layer. A CO conditioning is
preformed on the at least one feature after the at least one feature is
etched. The patterned photoresist mask is stripped after the CO
conditioning.