A method of providing a gate conductor on a semiconductor is provided. The method includes defining an organic polymer plating mandrel on the semiconductor, activating one or more sites of the organic polymer plating mandrel, binding a seed layer to the activated sites, and plating the dummy gate on the seed layer. The dummy gate defines a location for the gate conductor. Semiconductor devices having a dummy gate plated thereon to a width of between about 10 to about 70 nanometers are also provided.