An asymmetrically programmed memory material (such as a solid electrolyte
material) is described for use as a rectifying element for driving
symmetric or substantially symmetric resistive memory elements in a
crosspoint memory architecture. A solid electrolyte element (SE) has very
high resistance in the OFF state and very low resistance in the ON state
(because it is a metallic filament in the ON state). These attributes
make it a near ideal diode. During the passage of current (during
program/read/erase) of the memory element, the solid electrolyte material
also programs into the low resistance state. The final state of the solid
electrolyte material is reverted to a high resistance state while making
sure that the final state of the memory material is the one desired.