Silicon carbide semiconductor devices and methods of fabricating silicon
carbide semiconductor devices are provided by successively etching a mask
layer to provide windows for formation of a source region of a first
conductivity type, a buried silicon carbide region of a second
conductivity type opposite to the first conductivity type and a second
conductivity type well region in a first conductivity type silicon
carbide layer. The source region and the buried silicon carbide region
are formed utilizing a first window of the mask layer. Then, the well
region is formed utilizing a second window of the mask layer, the second
window being provided by a subsequent etch of the mask layer having the
first window.