A device includes a rectifying layer having a first side and a second side, a first array of wires formed above the first side of the rectifying layer, and a second array of wires formed below the second side of the rectifying layer.

 
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< Method and system for calibrating a micro-electromechanical system (MEMS) based sensor using tunneling current sensing

> Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect
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