A method and apparatus for dechucking a substrate is provided. In one embodiment, a processing chamber is provided that includes a grounded chamber body having a substrate support assembly disposed in an interior volume. A dechucking circuit selectively couples the substrate support assembly to ground or to a power source. In another embodiment of the invention, a method for dechucking a substrate includes the steps of completing a plasma process on a substrate disposed on a grounded substrate support assembly, disconnecting the substrate support assembly from ground, and applying a dechucking voltage to the substrate support assembly.