Methods for producing surface-emitting semi-conductor lasers with tunable
waveguiding are disclosed. The laser comprises an active zone containing
a pn-transition, surrounded by a first n-doped semiconductor layer and at
least one p-doped semiconductor layer. In addition to a tunnel junction
on the p-side of the active zone, the tunnel junction borders a second
n-doped semi-conductor layer with the exception of an area forming an
aperture. An n-doped layer is provided between the layer provided for the
tunnel junction and the at least one p-doped semiconductor layer. The
tunnel junction may be arranged in a maximum or minimum of the vertical
intensity distribution of the electric field strength. This enables
surface-emitting laser diodes to be produced in high yields with
stabilization of the lateral single-mode operation, high performance and
wave guiding properties.