A multilevel phase-change memory, manufacture method and operating method
thereof are provided. The memory includes a first phase change layer, a
second phase change layer, a first heating layer formed on one surface of
the first phase change layer, a second heating layer formed between the
first heating layer and the second phase change layer, a first top
electrode formed on another surface of the first phase change layer, a
second top electrode formed on the other surface of the second phase
change layer, and a bottom electrode formed on the other surface of the
first heating layer corresponding to the second heating layer. Further, a
substrate is provided to form the aforementioned components. The
substrate may also include a transistor. The disclosed device has a multi
memory state, thereby increasing the memory density, reducing the memory
area and lowering the power consumption.