In deep submicron memory arrays there is noted a relatively steady on
current value and, therefore, threshold values of the transistors
comprising the memory cell are reduced. This, in turn, results in an
increase in the leakage current of the memory cell. With the use of an
ever increasing number of memory cells leakage current must be
controlled. A method and apparatus using a dynamic threshold voltage
control scheme implemented with no more than minor changes to the
existing MOS process technology is disclosed. The disclosed invention
controls the threshold voltage of MOS transistors. Methods for enhancing
the impact of the dynamic threshold control technology using this
apparatus are also included. The invention is particularly useful for
SRAM, DRAM, and NVM devices.