The present invention provides a method for controlling power change for a semiconductor module. Specifically, under the present invention power is applied to, or removed from a semiconductor module between a lower power state such as a zero power, nap or sleep state and a full power state over a predetermined time period. This allows the rate of movement and strain rate of the thermal interface material within the semiconductor module to be controlled, thus preserving the reliability of the material. Typically, the power is changed over time between the lower power state and the full power state in a linear fashion or incrementally.