A method of manufacturing a semiconductor device includes: forming a circuit element on a semiconductor substrate; forming a first insulation film on top to cover the circuit element; forming a first electrode on top; forming a ferroelectric film on the first electrode; forming a second electrode on the ferroelectric film; forming a mask film on the second electrode; etching the second electrode with the semiconductor substrate or a mounting electrode set to a first temperature using the mask film as a mask; etching the ferroelectric film with the semiconductor substrate or the mounting electrode set to a second temperature using the mask film as a mask, the second temperature being lower than the first temperature; and etching the first electrode with the semiconductor substrate or the mounting electrode set to a third temperature using the mask film as a mask, the third and first temperatures being approximately the same.