A semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical direction and a Gaussian shape, and that can be produced at lower cost by reducing the operating power needed. The semiconductor laser device is provided with a negative electrode, a GaN substrate, a first n-type clad layer, an n-type light shielding layer that shields light, a second n-type clad layer, an n-type optical waveguide layer, a first carrier stop layer, an active layer, a second carrier stop layer, a p-type optical waveguide layer, a p-type clad layer, a p-type contact layer, and a positive electrode laid in this order.