A semiconductor device has lateral conductors or traces that are formed of
nanotubes such as carbon. A sacrificial layer is formed overlying the
substrate. A dielectric layer is formed overlying the sacrificial layer.
A lateral opening is formed by removing a portion of the dielectric layer
and the sacrificial layer which is located between two columns of
metallic catalysts. The lateral opening includes a neck portion and a
cavity portion which is used as a constrained space to grow a nanotube. A
plasma is used to apply electric charge that forms an electric field
which controls the direction of formation of the nanotubes. Nanotubes
from each column of metallic catalyst are laterally grown and either abut
or merge into one nanotube. Contact to the nanotube may be made from
either the neck portion or the columns of metallic catalysts.