A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.