A method of manufacturing a semiconductor device having an interconnection
part formed of multiple carbon nanotubes is disclosed. The method
includes the steps of (a) forming a growth mode control layer controlling
the growth mode of the carbon nanotubes, (b) forming a catalyst layer on
the growth mode control layer, and (c) causing the carbon nanotubes to
grow by heating the catalyst layer by thermal CVD so that the carbon
nanotubes serve as the interconnection part. The growth mode control
layer is formed by sputtering or vacuum deposition in an atmospheric gas,
using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth
mode is controlled in accordance with a predetermined concentration of
oxygen gas of the atmospheric gas.