A method is provided for transferring a single-crystal silicon (Si) film
to a glass substrate. The method deposits a germanium (Ge)-containing
material overlying a Si wafer, forming a sacrificial Ge-containing film.
A single-crystal Si film is formed overlying the sacrificial
Ge-containing film. The Si film surface is bonded to a transparent
substrate, forming a bonded substrate. The bonded substrate is immersed
in a Ge etching solution to remove the sacrificial Ge-containing film,
which separates the transparent substrate from the Si wafer. The result
is a transparent substrate with an overlying single crystal Si film.
Optionally, channels can be formed to distribute the Ge etching solution,
and promote the removal of the Ge-containing film.