A method for creating semiconductor devices by etching a layer over a
wafer is provided. A photoresist layer is provided on a wafer. The
photoresist layer is patterned. The wafer is placed in a process chamber.
The photoresist is hardened by providing a hardening plasma containing
high energy electrons in the process chamber to harden the photoresist
layer, wherein the high energy electrons have a density. The layer is
etched within the process chamber with an etching plasma, where a density
of high energy electrons in the etching plasma is less than the density
of high energy electrons in the hardening plasma.