An apparatus (200) such as a semiconductor device comprises a gate electrode (201) and at least a first electrode (202). The first electrode preferably has an established perimeter that at least partially overlaps with respect to the gate electrode to thereby form a corresponding transistor channel. In a preferred approach the first electrode has a surface area that is reduced notwithstanding the aforementioned established perimeter. This, in turn, aids in reducing any corresponding parasitic capacitance. This reduction in surface area may be accomplished, for example, by providing openings (203) through certain portions of the first electrode.