Improved methods of manufacturing semiconductor devices are provided to
reduce dielectric loss in isolation trenches of the devices. In one
example, a method of manufacturing a semiconductor device includes
forming a plurality of shallow trench isolation (STI) trenches in a
substrate. A tunnel oxide layer, a first conductive layer, a gate
dielectric layer, and a second conductive layer are formed above the
substrate. The layers are etched to delineate a plurality of stacked gate
structures. In particular, the etching may include: performing a first
etch of the second conductive layer, wherein at least a portion of the
second conductive layer above the STI trenches remains following the
first etch; and performing a second etch of the second conductive layer,
wherein the remaining portion of the second conductive layer above the
STI trenches and portions of the gate dielectric layer above the STI
trenches are completely removed by the second etch.