A process for producing boron nitride of high purity and high thermal conductivity, wherein a oxygen-containing boron compound is reacted with a nitrogen-containing source in the presence of a dopant at a temperature of at least 1000.degree. C. for at least one hour, and wherein the dopant forms metal borate impurities with a vaporizing temperature that is lower than the highest processing temperature in the process.

 
Web www.patentalert.com

< Material useful for preparing embossed flexible graphite article

> Sensor and method for detecting electric contact degradation

~ 00415