A method for producing high resolution nano-imprinting masters is
disclosed. The method inverts the negative features of an exposed and
developed positive e-beam resist to positive features in the patterned
silicon nitride layer of the nano-imprinting master. A first, oxidation
resistant, mask layer is used to pattern a DLC layer deposited on the
silicon nitride layer. After patterning the DLC layer, the negative
features of the DLC layer are filled with deposited metal, which creates
a second mask layer subsequent to the removal of the remaining DLC layer.
The second mask layer is used to etch the silicon nitride layer, creating
the final nano-imprinting master.