A DRAM cell and a method for fabricating the same are provided. The method
includes: forming a trench in a substrate; forming a first capacitor
dielectric layer on the surface of the trench; forming a conducting layer
inside the trench; forming a second capacitor dielectric layer on the
surface of the substrate and on the conducting layer, wherein the
substrate around the first and second capacitor dielectric layers serves
as a bottom electrode; forming a protruding electrode on the substrate,
the protruding electrode being on the substrate around the trench and
covering a junction between the trench and the substrate; and
electrically connecting the protruding electrode and the conducting
layer, the conducting layer and the protruding electrode being an upper
electrode.