A conduction film 36 is formed in a larger design thickness value on a ferroelectric film 32 by MOCVD, and the entire surface of the conduction film 36 is anisotropically etched back, whereby the surface morphology of the conduction film 36 can be improved. The conduction film 36, whose surface morphology has been improved and which has been flattened, can be patterned by photolithography without the reflection of the incident exposure light in various directions, and a desired pattern as designed can be formed. The method for fabricating a semiconductor device can improve the surface morphology of a ferroelectric film formed by organic metal chemical vapor deposition.