Methods are provided for semiconductor devices having low contact resistance. The method in accordance with one embodiment of the invention comprises forming an insulating layer overlying a semiconductor substrate, the semiconductor substrate having a device region therein. An opening is formed through the insulating layer to expose a portion of the device region, and the portion of the device region is then electrically contacted by a metallic liner layer. To reduce the resistance of the liner layer and hence the contact, ions of a conductivity determining impurity are implanted into the metallic liner layer. A metal layer is then deposited overlying the metallic liner layer to fill the opening through the insulating layer and to form a conductive plug.