The amount of current flowing in the bitline during reading of a memory
cell which is in the conductive state, hereinafter called the memory cell
current, can be amplified manifold by changing the above mentioned select
transistors to a novel device which is described in detail. The increase
of the area of the said memory arrays due to the replacement of said
select transistor with the novel device is very small. In addition the
novel device can be built within the pitch of said select transistor,
which is the pitch of the bitline. The novel device can be used in many
types of semiconductor memories, as described in the various embodiments.
Static random access semiconductor memories can also benefit from the use
of the novel devices.