The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1.times.10.sup.18 atoms/cm.sup.3 and the growth condition V/G falls within the epitaxial defect-free region .alpha..sub.2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. A silicon wafer is also produced wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region .beta..sub.1, and both the heat treatment condition and the oxygen concentration of the silicon crystal are controlled so that no OSF nuclei grow to OSFs.