A bipolar transistor formed in a substrate includes a collector, a base layer above the collector, where the base layer includes a base that is monocrystalline, and an emitter layer that is monocrystalline and above the base, where the emitter layer includes silicon or silicon-germanium. An intermediate layer is above the base layer and below the emitter layer. The intermediate layer includes silicon carbide. The intermediate layer is grown epitaxially and is etchable in a dry plasma relative to the emitter layer.