The present invention relates to a sapphire/gallium nitride laminate, wherein a curvature radius thereof is positioned on the right side of a first curve plotted from the following functional formula (I): Y=Y.sub.0+Ae.sup.-(x-1)/T (I) wherein Y is the curvature radius (m) of a sapphire/gallium nitride laminate, X is the thickness (.mu.m) of a gallium nitride film, Y.sub.0 is 5.47.+-.0.34, A is 24.13.+-.0.50, and T is 0.56.+-.0.04. The inventive laminate can be advantageously used in the manufacture of a high quality electronic device.