A copper interconnection where holes in the vicinity of an interface are reduced to lower contribution of interface diffusion to Cu the EM, increase a lifetime, and simultaneously increase adhesiveness and resistance to stress migration is constituted in a manner that impurities 15 form a solid solution in the vicinity of an interface between a Cu layer 16 and a barrier metal layer 12, the impurities are precipitated, and an amorphous Cu layer 14 is fabricated, or a compound with Cu is fabricated. The copper interconnection is also constituted in a manner that impurities 15 form a solid solution in the vicinity of an interface between the Cu layer 16 and a cap layer 19, the impurities 15 are precipitated, and an amorphous Cu layer 14 is fabricated, or a compound with Cu is fabricated.