A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature.A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.