The present invention relates to a semiconductor device having capacitors. The configuration of the device includes: capacitor upper electrodes 14a, 14b formed via a dielectric film 13 on plate lines 12a that become capacitor lower electrodes; a conductive connecting sections 12b that are connected to one ends of the plate lines 12a and have contact regions; upper conductive patterns 14c that are formed between the contact regions and the edge of plate lines 12a on the dielectric film 13 on the conductive connecting sections 12b and are in the same layer as the capacitor upper electrodes 14a, 14b.