A semiconductor structure includes a semiconductor substrate, a
semiconductor active region, a semiconductor contact layer, at least one
metal migration semiconductor barrier layer, and a metal contact. The
metal migration semiconductor barrier layer may be embedded within the
semiconductor contact layer. Furthermore, the metal migration
semiconductor barrier layer may be located underneath or above and in
intimate contact with the semiconductor contact layer. The metal
migration semiconductor barrier layer and the semiconductor contact layer
form a contact structure that prevents metals from migrating from the
metal contact into the semiconductor active layer during long-term
exposure to high temperatures. By providing a robust contact structure
that may be used in semiconductor structures, for example in solar cells
that power spacecraft or terrestrial solar cells used under concentrated
sunlight, the high temperature reliability of the semiconductor structure
will be improved and the operation time will be prolonged.