This invention pertains to electronic/optoelectronic devices with reduced
extended defects and to a method for making it. The method includes the
steps of depositing a dielectric thin film mask material on a
semiconductor substrate surface; patterning the mask material to form
openings therein extending to the substrate surface; growing active
material in the openings; removing the mask material to form the device
with reduced extended defect density; and depositing electrical contacts
on the device.