Each memory cell is composed of a storage layer (2) for storing therein
information based on the magnetization state of a magnetic material, a
magnetization fixed layer (4) provided on the storage layer (2) through
an intermediate layer (3), a storage element (10) for applying an
electric current in the laminating layer direction to change the
direction of magnetization of the storage layer (2) thereby to record
information on the storage layer (2) and a memory cell including a
selection transistor, wherein a polarity which requires a large amount of
electric current to record information and a polarity by which a large
amount of saturation electric current can be supplied to the selection
transistor are made coincident with each other. A size of each memory
cell including the selection transistor can be decreased to the minimum
by suppressing influences of asymmetric property of a write electric
current and a memory can integrate the memory cells at a high density.