The invention relates to a semiconductor device (10) comprising a semiconductor body (11) in which an IC is formed and which has a number of connection regions (1) for the IC on its surface, including at least two connection regions (1A) for a supply connection, the lower side of the semiconductor body (11) being provided with a number of further connection regions (2) which are connected to a connection region (1) by means of an electric connection (3) which is present on a side face of the semiconductor body (11) and electrically insulated therefrom, and the semiconductor body (11) being attached to a lead frame (4) and wire connections (5) being formed between leads (4A) of the frame (4) and connection regions (1) . According to the invention, the electric connection (3) comprises a plurality of parallel, regularly spaced strip-shaped conductors (3A), and the connection regions (1A) for the supply connection are each connected with a further connection region (2) by means of two or more of said strip-shaped conductors (3A), which further connection region is directly connected to a lead (4B) of the frame (4) , while the remainder of the connection regions (1B) are directly connected with leads (4) by means of the wire connections (5) . Such a device (10) has a very stable supply voltage and excellent high-frequency behavior, while the supply current may be extremely high. The invention further comprises a semiconductor body (11) suitable for use in such a device (10) and a method of manufacturing such a device (10).