In preferred embodiments, a polydentate pore-sealing ligand is used to seal or repair pores damaged by plasma processing. The polydentate ligand includes bidentate ligands corresponding to the general formula X--CH.sub.2--(CH.sub.2).sub.n--CH.sub.2--X or X--Si(CH.sub.3).sub.2--(CH.sub.2).sub.n--Si(CH.sub.3).sub.2--X. The polydentate ligand also includes tridendate ligands corresponding to the general formula X--CH.sub.2--(CH.sub.2).sub.m(CXH)(CH.sub.2).sub.o--CH.sub.2--X or X--Si(CH.sub.3).sub.2--(CH.sub.2).sub.m(CXH)(CH.sub.2).sub.o--Si(CH.sub.3- ).sub.2--X. Alternative embodiments may include single or multiply branched polydentate ligands. Other embodiments include ligands that are cross-linked after attachment to the dielectric. Still other embodiments include a derivatization reaction wherein silanol groups formed by plasma damage are removed and favorable dielectric properties are restored.

 
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> Methods for forming thin film layers by simultaneous doping and sintering

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