The present disclosure relates generally to the field of semiconductor manufacturing. In one example, in a production flow of low-volume, high-precision semiconductor products, a method for controlling critical dimensions of a semiconductor product during a semiconductor processing operation in the production flow, the semiconductor processing operation requiring a desired energy value to achieve the critical dimensions includes: measuring a previously formed critical dimension on the product; calculating a first energy value based on the measured critical dimension and a desired critical dimension for the semiconductor processing operation; and obtaining the desired energy value based on the calculated first energy value and a previously-obtained desired energy for the semiconductor processing operation performed on a prior product in the production flow.

 
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> Thin film transistor and organic electroluminescence display using the same

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