An electronic component is disclosed having a first layer of metallically conductive material, a second layer of semiconductor material, and a third layer between the first and second layers. The third layer comprises a dielectric and at least inhibits charge carrier transport both from the first to the second layer and also from the second to the first layer. The dielectric comprises praseodymium oxide of the form Pr.sub.2O.sub.3 in predominantly single crystal phase, and the second layer comprises silicon with a (001)- or with a (111)-crystal orientation at an interface with the third-layer.