A method of making a semiconductor device includes forming a wafer having a substrate and an interconnect structure over the substrate. The wafer also includes a plurality of die areas and a street located between a first die area of the plurality and a second die area of the plurality. A separation structure that includes metal is located in the interconnect structure. At least a portion of the separation structure is located in a saw kerf of the street. The separation structure is arranged to provide a predefined separation path for separating the first die area during a singulation process.