A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.

 
Web www.patentalert.com

< Semiconductor devices including peripherally located bond pads, intermediates thereof, assemblies, and packages including the semiconductor devices, and support elements for the semiconductor devices

< Flexible ball grid array chip scale packages

> Seedless wirebond pad plating

> Nonvolatile magnetic memory device and method of writing data into tunnel magnetoresistance device in nonvolatile magnetic memory device

~ 00292