A doped tin-indium solder composition is disclosed. The doped tin-indium solder exhibits a retained fine-grain structure and superplasticity after significant thermal cycling and thermal and mechanical stresses experienced in a microelectronic package. A process of forming the doped tin-indium solder is also disclosed. A microelectronic package is also disclosed that uses the doped tin-indium solder composition. A method of assembling a microelectronic package is also disclosed. A computing system is also disclosed that includes the doped tin-indium solder.

 
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> Modified sintered RE-Fe-B-type, rare earth permanent magnets with improved toughness

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