A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.

 
Web www.patentalert.com

< Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization

< Lanthanide doped TiOx dielectric films by plasma oxidation

> Method of fabricating silicon nitride nanodots

> Semiconductor device using low dielectric constant material film and method of fabricating the same
~ 00283