Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

 
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