A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.